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By Beck C.E.

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This increase could have been caused by a build up of charge between the plates. 4-1: DEA results for clean silicon wafer, permittivity as temperature increased 32 The parameter of concern for the polymer measurements was the dielectric tan delta, defined as the dielectric loss modulus divided by the dielectric permittivity. 4-2. 4-2: DEA of clean silicon wafer To observe how a thin film would perform in DEA, several runs of the polymer films on silicon were done. 4-3. The plot closely resembled those of the blank silicon wafers.

At the onset of the glass transition, the penetration probe should depress into the softening polymer. This depression appears to the instrument as if it observed a 36 decrease in dimension. 5-1. The Tg of this sample was 90 °C. 5-1: 900 nm DMA The next step was to perform similar experiments with the thinner films. 5-2, no decrease in probe position was observed. The instrument was believed to be not sensitive enough to detect these nanometer changes in position. Therefore, a thicker film of 660 nm was tested; again, no depression was seen.

The feature size measured for the 40ht sample was appeared less than that of the 40t sample. Likewise, the measurement of the 100ht sample was less than that of the 100t sample. 4-13: AFM images of 40ht sample. 4-14: 3-D AFM image of 40ht sample. 4-15: AFM images of 100ht sample. 4-16: 3-D AFM image of 100ht sample. 58 The last AFM images presented are of the polymer brush samples after washing in chloroform. These sample images were compared to those presented above of the 100t and 100ht samples.

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