By Roel Gronheid, Paul Nealey
The directed self-assembly (DSA) approach to patterning for microelectronics makes use of polymer phase-separation to generate beneficial properties of below 20nm, with the positions of self-assembling fabrics externally guided into the specified trend. Directed self-assembly of Block Co-polymers for Nano-manufacturing reviews the layout, creation, functions and destiny advancements had to facilitate the widescale adoption of this promising technology.
Beginning with an exceptional assessment of the physics and chemistry of block copolymer (BCP) fabrics, half 1 covers the synthesis of latest fabrics and new processing tools for DSA. Part 2 then is going directly to define the major modelling and characterization rules of DSA, reviewing templates and patterning utilizing topographical and chemically transformed surfaces, line facet roughness and dimensional keep an eye on, x-ray scattering for characterization, and nanoscale pushed meeting. eventually, half three discusses program components and similar concerns for DSA in nano-manufacturing, together with for simple good judgment circuit layout, the inverse DSA challenge, layout decomposition and the modelling and research of enormous scale, template self-assembly production techniques.
- Authoritative outlining of theoretical ideas and modeling thoughts to offer an intensive introdution to the topic
- Discusses a large variety of practical applications for directed self-assembly in nano-manufacturing
- Highlights the significance of this know-how to either the present and way forward for nano-manufacturing by exploring its strength use in more than a few fields
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Extra resources for Directed Self-assembly of Block Co-polymers for Nano-manufacturing
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Preliminary thin film experiments indicate viability of the OPMA-b-S combination for useful self-assembly properties. Provided that a nonpreferential, cross-linked, random S/OPMA/GMA composition is selected as neutral layer on silicon wafers, vertical lamellar features of promising coherence length can be generated in thin films of OPMA-b-S. 21. Thermodynamic stability and etch selectivity studies are in progress. 20 SAXS intensity of OPMA-b-S powder grown under different conditions. Open circles: incomplete growth; solid triangles: >90% mass recovery of particles.
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