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DK Nayak, JCS Woo, GK Yabiku, KP MacWilliams, JS Park, and KL Wang. High mobility GeSi PMOS on SIMOX. IEEE Electron Device Letters 14:520–522, 1993. 86. DK Nayak, JCS Woo, JS Park, KL Wang, and KP MacWilliams. High-mobility p-channel metal-oxide semiconductor field-effect transistor on strained Si. Applied Physics Letters 62:2853–2855, 1993. 87. J Welser, JL Hoyt, and JF Gibbons. Electron mobility enhancement in strained-Si n-type metal-oxide semiconductor field-effect transistors. IEEE Electron Device Letters 15:100–102, 1994.

Materials Science and Engineering B 9:237–244, 1991. 83. DS Chen, JP Conde, V Chu, S Aljishi, JZ Liu, and S Wagner. Amorphous silicon–germanium thinfilm photodetector array. IEEE Electron Device Letters 13:5–7, 1992. 84. S-B Hwang, YK Fang, K-H Chen, C-R Liu, J-D Hwang, and M-H Chou. An a-Si:H/a-Si, Ge:H bulk barrier phototransistor with a-SiC:H barrier enhancement layer for high-gain IR optical detector. IEEE Transactions on Electron Devices 40:721–726, 1993. 85. DK Nayak, JCS Woo, GK Yabiku, KP MacWilliams, JS Park, and KL Wang.

46. DL Harame, K Schonenberg, M Gilbert, D Nguyen-Ngoc, J Malinowski, S-J Jeng, BS Meyerson, JD Cressler, R Groves, G Berg, K Tallman, K Stein, G Hueckel, C Kermarrec, T Tice, G Fitzgibbons, K Walter, D Colavito, T Houghton, N Greco, T Kebede, B Cunningham, S Subbanna, JH Comfort, and EF Crabbe´. A 200 mm SiGe-HBT technology for wireless and mixed-signal applications. Technical Digest IEEE International Electron Devices Meeting, Washington, 1994, pp. 437–440. 47. JD Cressler, EF Crabbe´, JH Comfort, JY-C Sun, and JMC Stork.

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